World · India Bureau
India's first vertically integrated SiC semiconductor facility nears startup
RIR Power Electronics has completed equipment installation at its Rs 618 crore manufacturing unit in Bhubaneswar, positioning the facility to commence silicon carbide semiconductor production within the coming quarter.
LSN India ·

RIR Power Electronics is on the cusp of launching India's first fully vertically integrated silicon carbide (SiC) semiconductor manufacturing operation, marking a significant milestone in the country's push toward semiconductor self-sufficiency. The Bhubaneswar-based facility, representing an investment of Rs 618 crore, has completed the installation of critical production equipment and is expected to begin commercial operations within the next three months.
The facility's establishment addresses a critical gap in India's semiconductor ecosystem, as SiC semiconductors are essential components in electric vehicles, renewable energy systems, and industrial power conversion applications—sectors experiencing rapid growth across South Asia. By developing indigenous production capacity, RIR Power Electronics aims to reduce India's dependence on imported SiC devices while strengthening the country's technological capabilities in advanced semiconductor manufacturing.
Vertically integrated production encompasses the entire manufacturing chain, from wafer fabrication through device assembly and testing. This comprehensive approach enables manufacturers to maintain strict quality control and optimize production efficiency, factors crucial for meeting the demanding specifications required by automotive and industrial clients.
The Bhubaneswar unit's commissioning aligns with India's broader semiconductor ambitions, including government incentives under production-linked incentive schemes designed to attract chipmakers and foster domestic manufacturing capabilities. The facility's operational readiness comes as global demand for SiC semiconductors accelerates, driven by the worldwide transition toward electrification and energy efficiency.